一种砷化镓单片压控振荡器

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156582

B. Scott, M. Wurtele, B. Creggar

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引用次数: 1

摘要

一个单片压控振荡器，连续覆盖11.5- 20.0GHz频段，平均输出功率为+ 12.8dBm，将被描述。一个(1.1 × 1.3)mm2的芯片包含一个300μm宽的场效应管、射频旁路电容器、栅极和源电感以及两个平面高电容比变容管。

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A GaAs monolithic voltage controlled oscillator

A monolithic voltage-controlled oscillator covering the 11.5- 20.0GHz band continuously, with an average power output of + 12.8dBm, will be described. A (1.1 × 1.3)mm2chip contains a 300μm wide FET, RF bypass capacitors, gate and source inductors and two planar high capacitance ratio varactors.

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1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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