用于低偏压工作的复合场mic - pd

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516213

T. Yoshimatsu, Y. Muramoto, S. Kodama, T. Furuta, N. Shigekawa, H. Yokoyama, T. Ishibashi

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引用次数: 4

摘要

一种新型的具有复合场耗尽层的最大感应电流光电二极管(MIC-PD)结构在2 V的低反向偏置电压下，光输入功率为+7 dBm，具有0.8 A/W的高响应率和30 GHz的宽3db带宽。

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Composite-field MIC-PDs for low-bias-voltage operation

A novel maximized-induced-current-photodiode (MIC-PD) structure with a composite field depletion layer achieves high responsivity of 0.8 A/W and a wide 3-dB bandwidth of 30 GHz at a low reverse bias voltage of 2 V for optical input power of +7 dBm.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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