{"title":"电可变8192位n通道MOS PROM","authors":"R. Muller, H. Nietsch, B. Rossler, E. Wolter","doi":"10.1109/ISSCC.1977.1155651","DOIUrl":null,"url":null,"abstract":"THERE HAS BEEN an increasing interest in recent years in an electrically erasable MOS PROM employing the excellent information retention of the floating gate principle’. Several proposals for N-channel EAROMs are known’ >3. This paper will describe an 8192-bit N-channel EAROM featuring: a ) single transistor cell, b) standard operating voltages and single high voltage pulse for programming and erasure, c), 24-pin package, d) input/output TTL compatible for read and programming, e ) static, no clock required, and fl low standby power.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"28 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrically alterable 8192 bit N-channel MOS PROM\",\"authors\":\"R. Muller, H. Nietsch, B. Rossler, E. Wolter\",\"doi\":\"10.1109/ISSCC.1977.1155651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"THERE HAS BEEN an increasing interest in recent years in an electrically erasable MOS PROM employing the excellent information retention of the floating gate principle’. Several proposals for N-channel EAROMs are known’ >3. This paper will describe an 8192-bit N-channel EAROM featuring: a ) single transistor cell, b) standard operating voltages and single high voltage pulse for programming and erasure, c), 24-pin package, d) input/output TTL compatible for read and programming, e ) static, no clock required, and fl low standby power.\",\"PeriodicalId\":416313,\"journal\":{\"name\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"28 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1977.1155651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1977.1155651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrically alterable 8192 bit N-channel MOS PROM
THERE HAS BEEN an increasing interest in recent years in an electrically erasable MOS PROM employing the excellent information retention of the floating gate principle’. Several proposals for N-channel EAROMs are known’ >3. This paper will describe an 8192-bit N-channel EAROM featuring: a ) single transistor cell, b) standard operating voltages and single high voltage pulse for programming and erasure, c), 24-pin package, d) input/output TTL compatible for read and programming, e ) static, no clock required, and fl low standby power.
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