{"title":"InAs中非平衡载流子重组的研究","authors":"V. Kesler, A. V. Gorbunov","doi":"10.1109/EDM.2009.5173915","DOIUrl":null,"url":null,"abstract":"This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Investigation of recombination of nonequilibrium charge carriers in InAs\",\"authors\":\"V. Kesler, A. V. Gorbunov\",\"doi\":\"10.1109/EDM.2009.5173915\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.\",\"PeriodicalId\":262499,\"journal\":{\"name\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2009.5173915\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of recombination of nonequilibrium charge carriers in InAs
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.
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