Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou
{"title":"溅射沉积硅化钨薄膜的电学性能","authors":"Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou","doi":"10.1109/SMELEC.2010.5549498","DOIUrl":null,"url":null,"abstract":"This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical properties of sputtered deposited tungsten silicide films\",\"authors\":\"Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou\",\"doi\":\"10.1109/SMELEC.2010.5549498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.\",\"PeriodicalId\":308501,\"journal\":{\"name\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2010.5549498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical properties of sputtered deposited tungsten silicide films
This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
