Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity

The design of radiation tolerant mixed-signal circuits is confronted with either RHBD transistors that are not supported by the foundry monitoring and modelling or the inaccurate estimate of the radiation effects of the foundry supported devices. A test-vehicle has been created that includes for all the DARE180U technology devices types and channel geometries test structures to capture the electrical characterisation of the TID radiation response. The results of the measurements are presented and do allow a more accurate estimate of the TID radiation response for the mixed-signal circuits in the DARE180U technology. Furthermore, the wealth of data obtained would enable accurate modelling of the radiation TID effects in these devices.