InAs纳米线中电子传递过程中的量子现象

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650262

D. Grutzmacher, C. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, T. Schapers

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摘要

研究了InAs纳米线中的量子输运。从0.5 K时的通用电导波动中提取了300 nm的相相干长度。通过对栅极相关的电导波动进行平均，发现弱反局域化引起的磁电导峰值表明存在自旋轨道耦合。在由三个门指构成的纳米线量子点中，证实了单电子隧穿现象

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Quantum phenomena during electron transport in InAs nanowires

We investigated the quantum transport in InAs nanowires. From the universal conductance fluctuations at 0.5 K a phase-coherence length of 300 nm was extracted. By averaging the gate-dependent conductance fluctuations a magnetoconductance peak due to weak antilocalization was found indicating the presence of spin-orbit coupling. In a nanowire quantum dot formed by three gate fingers single electron tunneling was confirmed

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CAS 2010 Proceedings (International Semiconductor Conference)

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