J. Tantillo, P. Cook, K. Evans, M.J. Martinez, R. Bobb, E. Martinez, C. E. Stutz, F. Schuermeyer
{"title":"带GaAsSb通道的p- hfet","authors":"J. Tantillo, P. Cook, K. Evans, M.J. Martinez, R. Bobb, E. Martinez, C. E. Stutz, F. Schuermeyer","doi":"10.1109/CORNEL.1989.79849","DOIUrl":null,"url":null,"abstract":"The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"p-HFETs with GaAsSb channel\",\"authors\":\"J. Tantillo, P. Cook, K. Evans, M.J. Martinez, R. Bobb, E. Martinez, C. E. Stutz, F. Schuermeyer\",\"doi\":\"10.1109/CORNEL.1989.79849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage.<>
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