闪存eeprom的技术趋势——闪存eeprom能战胜DRAM吗?

F. Masuoka
{"title":"闪存eeprom的技术趋势——闪存eeprom能战胜DRAM吗?","authors":"F. Masuoka","doi":"10.1109/VLSIT.1992.200615","DOIUrl":null,"url":null,"abstract":"It is pointed out that the EEPROMs have the potential to replace magnetic hard and floppy disks as computer memories. The cost and technical aspects of EEPROM devices are discussed. The particular advantages of NAND EEPROMs are also considered.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Technology trend of flash-EEPROM-Can flash-EEPROM overcome DRAM?\",\"authors\":\"F. Masuoka\",\"doi\":\"10.1109/VLSIT.1992.200615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is pointed out that the EEPROMs have the potential to replace magnetic hard and floppy disks as computer memories. The cost and technical aspects of EEPROM devices are discussed. The particular advantages of NAND EEPROMs are also considered.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

有人指出,eeprom具有取代磁性硬盘和软盘作为计算机存储器的潜力。讨论了EEPROM器件的成本和技术问题。NAND eeprom的特殊优势也被考虑
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Technology trend of flash-EEPROM-Can flash-EEPROM overcome DRAM?
It is pointed out that the EEPROMs have the potential to replace magnetic hard and floppy disks as computer memories. The cost and technical aspects of EEPROM devices are discussed. The particular advantages of NAND EEPROMs are also considered.<>
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