6.1 A 100Gb/s 1.1pJ/b PAM-4 RX双模1-Tap / 3-Tap NRZ投机DFE在14nm CMOS FinFET

A. Cevrero, Ilter Özkaya, P. Francese, M. Brändli, C. Menolfi, T. Morf, M. Kossel, L. Kull, D. Luu, M. Dazzi, T. Toifl
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To achieve low BER with $\\gt16$ dB loss channel the RX uses a CTLE combined with a 1-tap speculative DFE. To minimize power consumption, the number of slicing levels to resolve the 1-tap PAM-4 DFE speculation is reduced from 12 to 8 by shaping the channel to a1 +0.5D response (h 0 +0.5 $\\ast$ h0) with CTLE and TXFFE. With a1 +0.5D channel, 4 out of 12 speculative decisions are overlapped. Moreover, comparators used for DFE speculation can be shared for phase detection in a baud-rate CDR scheme, extending the concept proposed in [2] to PAM-4. In NRZ mode, the RX features a fully speculative 3-tap DFE to equalize high loss channels $(\\gt35$ dB) at 56Gb/s. 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引用次数: 32

摘要

有线通信中对更高数据速率的需求不断增长,导致了使用PAM-4信令的100Gb/s+范围内的新兴标准。基于adc的接收器已经在高损耗$($ gt20$ dB)[1]的信道上表现出了强大的运行能力,但是它们的功耗$($ gt500$ mW/lane,不包括DSP)对于在短距离芯片对芯片和芯片对模块链路(如OIF-CEI-112G-VSR/XSR/USR)中需要大量端口计数的应用来说是令人难以接受的。这项工作展示了双PAM-4/NRZ RX在14nm FinFET中实现,在PAM-4模式下测量到高达100Gb/s,在低功耗的19.2 db损耗通道上实现了fec前BER $\lt 10^{-12}$。为了在$ $ gt16$ dB损耗通道下实现低误码率,RX使用CTLE和1分路推测DFE相结合。为了最大限度地减少功耗,通过使用CTLE和TXFFE将通道塑造为a1 +0.5 d响应(h 0 +0.5 $\ast$ h0),将用于解决1分接PAM-4 DFE推测的切片电平数量从12减少到8。在a1 +0.5D通道中,12个投机决策中有4个是重叠的。此外,用于DFE推测的比较器可以在波特率CDR方案中共享用于相位检测,将[2]中提出的概念扩展到PAM-4。在NRZ模式下,RX具有完全投机的3分接DFE,以56Gb/s的速度均衡高损耗通道$(\gt35$ dB)。RX集成了以下关键进展:(1)跨导纳跨阻抗(TAS-TIS) CTLE电路,实现低功耗和紧凑的模拟前端(AFE),(2)基于a1 +0.5D响应的1分接PAM-4推测DFE,以及(3)CMOS正交dll (QDLL)产生正交时钟相位,从而实现低抖动/功率时钟路径。
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6.1 A 100Gb/s 1.1pJ/b PAM-4 RX with Dual-Mode 1-Tap PAM-4 / 3-Tap NRZ Speculative DFE in 14nm CMOS FinFET
The growing demand for higher data rates in wireline communications has led to emerging standards in the 100Gb/s+ range using PAM-4 signaling. ADC-based receivers have demonstrated robust operation over channels with high losses $(\gt20$ dB) [1], but their power consumption $(\gt500$ mW/lane excluding DSP) is prohibitive for applications requiring large port counts in short-reach chip-to-chip and chip-to-module links (such as OIF-CEI-112G-VSR/XSR/USR). This work demonstrates a dual PAM-4/NRZ RX implemented in 14nm FinFET and measured up to 100Gb/s in PAM-4 mode achieving pre-FEC BER $\lt 10^{-12}$ across a 19.2dB-loss channel with low power. To achieve low BER with $\gt16$ dB loss channel the RX uses a CTLE combined with a 1-tap speculative DFE. To minimize power consumption, the number of slicing levels to resolve the 1-tap PAM-4 DFE speculation is reduced from 12 to 8 by shaping the channel to a1 +0.5D response (h 0 +0.5 $\ast$ h0) with CTLE and TXFFE. With a1 +0.5D channel, 4 out of 12 speculative decisions are overlapped. Moreover, comparators used for DFE speculation can be shared for phase detection in a baud-rate CDR scheme, extending the concept proposed in [2] to PAM-4. In NRZ mode, the RX features a fully speculative 3-tap DFE to equalize high loss channels $(\gt35$ dB) at 56Gb/s. The RX incorporates the following key advances: (1) a trans-admittance trans-impedance (TAS-TIS) CTLE circuit resulting in a low-power and compact analog-front-end (AFE), (2) a 1-tap PAM-4 speculative DFE based on a1 +0.5D response, and (3) a CMOS quadrature-DLL (QDLL) generating quadrature clock phases resulting in a low jitter/power clock path.
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