{"title":"固定温度系数带隙基准的设计","authors":"T. Zhao, Dacheng Zhang","doi":"10.1109/EDSSC.2005.1635257","DOIUrl":null,"url":null,"abstract":"Since the sensitivity of a piezoresistive device has a large negative temperature coefficient, the device output decreases with the increase of the temperature. It is necessary to design a voltage reference which has the same temperature coefficient with the sensitivity of piezoresistive device to inhabit the temperature drift. The temperature coefficient of the designed voltage reference is calculated to be -2200ppm/°C and the output voltage is 1.5874v in room temperature, which can satisfy with the compensation requirements of the piezeresistive device.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Fixed Temperature Coefficient Bandgap Reference\",\"authors\":\"T. Zhao, Dacheng Zhang\",\"doi\":\"10.1109/EDSSC.2005.1635257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since the sensitivity of a piezoresistive device has a large negative temperature coefficient, the device output decreases with the increase of the temperature. It is necessary to design a voltage reference which has the same temperature coefficient with the sensitivity of piezoresistive device to inhabit the temperature drift. The temperature coefficient of the designed voltage reference is calculated to be -2200ppm/°C and the output voltage is 1.5874v in room temperature, which can satisfy with the compensation requirements of the piezeresistive device.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Fixed Temperature Coefficient Bandgap Reference
Since the sensitivity of a piezoresistive device has a large negative temperature coefficient, the device output decreases with the increase of the temperature. It is necessary to design a voltage reference which has the same temperature coefficient with the sensitivity of piezoresistive device to inhabit the temperature drift. The temperature coefficient of the designed voltage reference is calculated to be -2200ppm/°C and the output voltage is 1.5874v in room temperature, which can satisfy with the compensation requirements of the piezeresistive device.
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