加载对CMOS锁存器亚稳参数的影响

C. Portmann, T. Meng
{"title":"加载对CMOS锁存器亚稳参数的影响","authors":"C. Portmann, T. Meng","doi":"10.1109/VLSIC.1993.920520","DOIUrl":null,"url":null,"abstract":"We have discussed the behavior of buffered and unbuffered latches versus loading from a metastable performance viewpoint. A formula to determine T/sub 0/ for a buffered latch from an unbuffered one has been described. Measured results were presented for buffered and unbuffered latches. The results shown here are relevant to standard cell or gate array ASIC designers who generally use cells contained within a library and have little control over the cells, but some control over the selection and loading. Our results show the buffered version is superior for all fanouts greater than one; however, the MTBF performance is still exponentially related to loading.","PeriodicalId":127467,"journal":{"name":"Symposium 1993 on VLSI Circuits","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Loading effects on metastable parameters of CMOS latches\",\"authors\":\"C. Portmann, T. Meng\",\"doi\":\"10.1109/VLSIC.1993.920520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have discussed the behavior of buffered and unbuffered latches versus loading from a metastable performance viewpoint. A formula to determine T/sub 0/ for a buffered latch from an unbuffered one has been described. Measured results were presented for buffered and unbuffered latches. The results shown here are relevant to standard cell or gate array ASIC designers who generally use cells contained within a library and have little control over the cells, but some control over the selection and loading. Our results show the buffered version is superior for all fanouts greater than one; however, the MTBF performance is still exponentially related to loading.\",\"PeriodicalId\":127467,\"journal\":{\"name\":\"Symposium 1993 on VLSI Circuits\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1993 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1993.920520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1993 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1993.920520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

我们已经从亚稳态性能的角度讨论了缓冲和非缓冲闩锁与加载的行为。描述了从非缓冲锁存器确定缓冲锁存器的T/sub 0/的公式。给出了缓冲和非缓冲锁存器的测量结果。这里显示的结果与标准单元或门阵列ASIC设计人员相关,他们通常使用库中包含的单元,并且对单元几乎没有控制,但对选择和加载有一定的控制。我们的结果表明,缓冲版本对所有大于1的fanout都是优越的;然而,MTBF性能仍然与负载呈指数相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Loading effects on metastable parameters of CMOS latches
We have discussed the behavior of buffered and unbuffered latches versus loading from a metastable performance viewpoint. A formula to determine T/sub 0/ for a buffered latch from an unbuffered one has been described. Measured results were presented for buffered and unbuffered latches. The results shown here are relevant to standard cell or gate array ASIC designers who generally use cells contained within a library and have little control over the cells, but some control over the selection and loading. Our results show the buffered version is superior for all fanouts greater than one; however, the MTBF performance is still exponentially related to loading.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Open/folded bit-line arrangement for ultra high-density DRAMs A new very fast pull-in PLL system with anti-pseudo-lock function A 3 V data transceiver chip for dual-mode cellular communication systems A 12.5 ns 16 Mb CMOS SRAM Low voltage mixed analog/digital circuit design for portable equipment
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1