{"title":"改进表面微加工技术的集成平面LC低通滤波器的实现","authors":"J. Fang, Z.W. Liu, Z.M. Chen, L.T. Liu, Z.J. Li","doi":"10.1109/EDSSC.2005.1635379","DOIUrl":null,"url":null,"abstract":"An Integrated Planar LC LPF(Low-Pass Filter) is designed and fabricated with Modified Surface Micromachining. The LPF is accomplished on low-resistance silicon substrate. To increase the performance of the filter, the substrate underneath the devices is modified with OPS (oxided porous silicon) technology. Measurement results give -3dB bandwidth of 2.925GHz and midband insertion loss of 0.874dB at 500MHz.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Realization of an Integrated Planar LC Low-Pass Filter with Modified Surface Micromachining Technology\",\"authors\":\"J. Fang, Z.W. Liu, Z.M. Chen, L.T. Liu, Z.J. Li\",\"doi\":\"10.1109/EDSSC.2005.1635379\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An Integrated Planar LC LPF(Low-Pass Filter) is designed and fabricated with Modified Surface Micromachining. The LPF is accomplished on low-resistance silicon substrate. To increase the performance of the filter, the substrate underneath the devices is modified with OPS (oxided porous silicon) technology. Measurement results give -3dB bandwidth of 2.925GHz and midband insertion loss of 0.874dB at 500MHz.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635379\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Realization of an Integrated Planar LC Low-Pass Filter with Modified Surface Micromachining Technology
An Integrated Planar LC LPF(Low-Pass Filter) is designed and fabricated with Modified Surface Micromachining. The LPF is accomplished on low-resistance silicon substrate. To increase the performance of the filter, the substrate underneath the devices is modified with OPS (oxided porous silicon) technology. Measurement results give -3dB bandwidth of 2.925GHz and midband insertion loss of 0.874dB at 500MHz.
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