基于n掺杂CQD/MoS2 (0D/2D)量子异质结构的宽范围(紫外-可见-近红外)光电探测器

K. Kumar, D. Kaur
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引用次数: 0

摘要

本文利用二维(2D)层状MoS2和零维(0D) n掺杂碳量子点制备了基于N-CQDs/MoS2 (0D/2D)杂化尺寸异质结构的宽范围(UV到NIR)光电探测器。所制备的异质结构具有良好的光学和光电子性能。对所有三种紫外线、可见光和近红外辐射的发生率观察到显著的光响应。制备的异质结构在325 nm、532 nm和1064 nm波长下的响应度分别为4.31、26.73和20.72 AW-1。此外,记录的外量子效率(EQE)光谱支持异质结构优越的光伏性能。记录的响应时间表明,制备的异质结构对所有三种辐射的响应都很快。我们的研究结果表明,N-CQDs/MoS2异质结构在未来低成本,无毒,高效的光伏器件中具有巨大的潜力,可用于下一代宽范围光探测应用。
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A Broad Range (UV-Visible-NIR) Photodetector Based on N-Doped CQD/MoS2 (0D/2D) Quantum Dimensional Heterostructure
Herein, an N-CQDs/MoS2 (0D/2D) hybrid dimensional heterostructure based broad range (UV to NIR) photodetector has been fabricated with two-dimensional (2D) layered MoS2 and zero-dimensional (0D) N-doped Carbon quantum dots. The fabricated heterostructure offers good optical and optoelectronic properties. A significant photoresponse has been observed for the incidence of all three UV, visible and NIR radiations. The fabricated heterostructure gives responsivity of 4.31 AW-1, 26.73 AW-1, and 20.72 AW-1 at 325 nm, 532 nm, and 1064 nm wavelengths. Also, recorded external quantum efficiency (EQE) spectra support the superior photovoltaic performance of the heterostructure. Recorded response time demonstrates that the fabricated heterostructure responds fast to all three radiations. Our findings show that N-CQDs/MoS2 heterostructure has a great potential in futuristic low-cost, non-toxic, and highly efficient photovoltaic devices for next-generation broad range photodetection applications.
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