硅神经元短期抑制的随机突触

Peng Xu, T. Horiuchi, A. Sarje, P. Abshire
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引用次数: 3

摘要

我们报道了VLSI脉冲神经系统的随机动态突触。电路的紧凑性、实时随机特性和概率可调性使其非常适合实现具有各种动态的随机突触。随机突触使用减法单释放模型实现短期抑制(STD)。初步实验结果与理论预测吻合较好。具有STD的随机突触的输出具有较低的低频功率谱密度和负自相关特性,可以消除输入尖峰序列中的信息冗余。平均传输概率与输入尖峰率成反比,这被认为是神经系统中的一种自动增益控制机制。具有可塑性的硅随机突触可能是现有确定性VLSI脉冲神经系统的强大补充。
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Stochastic Synapse with Short-Term Depression for Silicon Neurons
We report a stochastic dynamical synapse for VLSI spiking neural systems. The compactness of the circuit, real-time stochastic behavior, and probability tuning make it well suitable to implement stochastic synapses with variety of dynamics. The stochastic synapse implements short-term depression (STD) using a subtractive single release model. Preliminary experimental results show a good match with theoretical predictions. The output from the stochastic synapse with STD has negative autocorrelation and lower power spectral density at low frequencies which can remove the information redundancy in the input spike train. The mean transmission probability is inversely proportional to the input spike rate which has been suggested as an automatic gain control mechanism in neural systems. The silicon stochastic synapse with plasticity could potentially be a powerful addition to existing deterministic VLSI spiking neural systems.
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