H. Park, P. Mandeville, R. Saito, P. Tasker, W. Schaff, L. Eastman
{"title":"栅极长度小至0.25 μ m的p沟道Al/sub 0.5/Ga/sub 0.5/As/GaAs modfet的射频和直流特性","authors":"H. Park, P. Mandeville, R. Saito, P. Tasker, W. Schaff, L. Eastman","doi":"10.1109/CORNEL.1989.79859","DOIUrl":null,"url":null,"abstract":"The authors have fabricated Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate length as small as 0.25 mu m and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7*10/sup 6/ cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"425 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m\",\"authors\":\"H. Park, P. Mandeville, R. Saito, P. Tasker, W. Schaff, L. Eastman\",\"doi\":\"10.1109/CORNEL.1989.79859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have fabricated Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate length as small as 0.25 mu m and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7*10/sup 6/ cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"425 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m
The authors have fabricated Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate length as small as 0.25 mu m and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7*10/sup 6/ cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits.<>
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