{"title":"面向单晶光子集成电路的膜混合光学器件及相关技术","authors":"N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880582","DOIUrl":null,"url":null,"abstract":"Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Membrane hybrid optical devices and related technologies toward on-Si photonic integrated circuits\",\"authors\":\"N. Nishiyama, S. Arai\",\"doi\":\"10.1109/ICIPRM.2014.6880582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Membrane hybrid optical devices and related technologies toward on-Si photonic integrated circuits
Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.