Jean-Marc Le Meil, B. Aspar, E. Desbonnets, J. Raskin
{"title":"工程基板:满足当前和未来射频需求的基础","authors":"Jean-Marc Le Meil, B. Aspar, E. Desbonnets, J. Raskin","doi":"10.1109/VLSI-DAT.2015.7114561","DOIUrl":null,"url":null,"abstract":"The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec and UCL explain the value of using RF-SOI substrates and more especially the new generation of Soitec widely adopted eSI™ (enhanced Signal Integrity) substrate to achieve the RF IC performance requested to address the LTE Advanced smart phone market.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Engineered substrates: The foundation to meet current and future RF requirements\",\"authors\":\"Jean-Marc Le Meil, B. Aspar, E. Desbonnets, J. Raskin\",\"doi\":\"10.1109/VLSI-DAT.2015.7114561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec and UCL explain the value of using RF-SOI substrates and more especially the new generation of Soitec widely adopted eSI™ (enhanced Signal Integrity) substrate to achieve the RF IC performance requested to address the LTE Advanced smart phone market.\",\"PeriodicalId\":369130,\"journal\":{\"name\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-DAT.2015.7114561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI Design, Automation and Test(VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-DAT.2015.7114561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Engineered substrates: The foundation to meet current and future RF requirements
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec and UCL explain the value of using RF-SOI substrates and more especially the new generation of Soitec widely adopted eSI™ (enhanced Signal Integrity) substrate to achieve the RF IC performance requested to address the LTE Advanced smart phone market.
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