不同开关层厚度HfOx RRAM器件的开关特性比较

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782952

Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park

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引用次数: 0

摘要

本文研究了Ni/HfOx/p+-Si在直流模式下不同开关层厚度(5/ 10nm)的开关特性。从10nm的HfOx RRAM中获得了较大的形成电压和开关比，而从5nm的HfOx RRAM中可以看到阶跃式复位过程。从测量结果来看，较厚的开关层制备的RRAM器件更适合于非易失性存储操作，而较薄的HfOx层在神经形态计算系统中具有应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

This paper presents switching characteristics of Ni/HfOx/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.

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2019 Silicon Nanoelectronics Workshop (SNW)

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