{"title":"基于准干层转移工艺的可穿戴Mos2光电探测器","authors":"M. Sharma, Rajendra Singh","doi":"10.1109/ICEE56203.2022.10118198","DOIUrl":null,"url":null,"abstract":"Here we fabricated a flexible MoS2 photodetector onto a transparent, ultrathin cellulose acetate substrate using a quasi-dry layer transfer process. The device showed the broadband photoresponse from ultraviolet to visible region. The maximum responsivity and detectivity of the MoS2/CA photodetector were found to be 9.1 mA/W and 2.82 × 1011 Jones, respectively. Additionally, the performance of the device was investigated with bending or strain, and it was shown that photocurrent is consistent with bending.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wearable Mos2 Photodetector based on Quasi-Dry Layer Transfer Process\",\"authors\":\"M. Sharma, Rajendra Singh\",\"doi\":\"10.1109/ICEE56203.2022.10118198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we fabricated a flexible MoS2 photodetector onto a transparent, ultrathin cellulose acetate substrate using a quasi-dry layer transfer process. The device showed the broadband photoresponse from ultraviolet to visible region. The maximum responsivity and detectivity of the MoS2/CA photodetector were found to be 9.1 mA/W and 2.82 × 1011 Jones, respectively. Additionally, the performance of the device was investigated with bending or strain, and it was shown that photocurrent is consistent with bending.\",\"PeriodicalId\":281727,\"journal\":{\"name\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEE56203.2022.10118198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wearable Mos2 Photodetector based on Quasi-Dry Layer Transfer Process
Here we fabricated a flexible MoS2 photodetector onto a transparent, ultrathin cellulose acetate substrate using a quasi-dry layer transfer process. The device showed the broadband photoresponse from ultraviolet to visible region. The maximum responsivity and detectivity of the MoS2/CA photodetector were found to be 9.1 mA/W and 2.82 × 1011 Jones, respectively. Additionally, the performance of the device was investigated with bending or strain, and it was shown that photocurrent is consistent with bending.
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