{"title":"曲率补偿CMOS带隙与sub - 1V电源","authors":"K. Tom, A. Alvandpour","doi":"10.1109/DELTA.2006.29","DOIUrl":null,"url":null,"abstract":"We describe a bandgap circuit capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18/spl mu/m CMOS technology and operates with 0.9 V supply voltage, consuming 5/spl mu/A current. The circuit achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60/spl deg/ centigrade.","PeriodicalId":439448,"journal":{"name":"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Curvature compensated CMOS bandgap with sub 1V supply\",\"authors\":\"K. Tom, A. Alvandpour\",\"doi\":\"10.1109/DELTA.2006.29\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a bandgap circuit capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18/spl mu/m CMOS technology and operates with 0.9 V supply voltage, consuming 5/spl mu/A current. The circuit achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60/spl deg/ centigrade.\",\"PeriodicalId\":439448,\"journal\":{\"name\":\"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DELTA.2006.29\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DELTA.2006.29","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Curvature compensated CMOS bandgap with sub 1V supply
We describe a bandgap circuit capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18/spl mu/m CMOS technology and operates with 0.9 V supply voltage, consuming 5/spl mu/A current. The circuit achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60/spl deg/ centigrade.