InGaAs mosfet的自对准S/D区

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044195

L. Czornomaz, M. Kazzi, D. Caimi, P. Machler, C. Rossel, M. Bjoerk, C. Marchiori, J. Fompeyrine

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引用次数: 7

摘要

研究了适用于极薄iii - v -on-绝缘体方法的砷化铟镓(In0.53Ga0.47As) n型金属氧化物半导体场效应晶体管的自对准通路。通过金属-有机气相外延选择性地生长高掺杂n+源/漏区，并采用自对准类硅化物工艺获得自对准镍- ingaas合金金属触点，其中研究了不同的工艺条件。软预外延清洗之后是x射线光电子能谱。测量了相关的接触电阻和片电阻，并强调了集成问题。

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Self-aligned S/D regions for InGaAs MOSFETs

Self-aligned access regions for indium gallium arsenide (In0.53Ga0.47As) n-type metal-oxide-semiconductor field effect transistors suitable for an extremely-thin III-V-on-insulator approach are investigated. Highly doped n+ source/drain regions are selectively grown by metal-organic vapor phase epitaxy and self-aligned Nickel-InGaAs alloyed metal contacts are obtained using a self-aligned silicide-like process, where different process conditions have been studied. Soft pre-epitaxy cleaning is followed by X-ray photoelectron spectroscopy. Relevant contact and sheet resistances are measured and integration issues are highlighted.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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