{"title":"iii - v基铁磁半导体中磁性的光操纵及其器件应用","authors":"H. Munckata","doi":"10.1109/DRC.2004.1367841","DOIUrl":null,"url":null,"abstract":"In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device application\",\"authors\":\"H. Munckata\",\"doi\":\"10.1109/DRC.2004.1367841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device application
In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.