III-V/Si异质集成中直接转移键合的键合位置精度

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598370

Hiromu Onodera, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama

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摘要

研究了非均相集成中InP/Si直接转移键合的键合位置精度。结果表明，在X和Y方向上存在较大的坐标偏差，这可能与胶片的张力密切相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration

Bonding position accuracy of InP/Si direct transfer bonding for heterogeneous integration were investigated. It was revealed that large difference of coordinate misalignment between X and Y directions exists and this may be strongly related to the tension of adhesive sheet.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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