{"title":"Ge, Si, GaAs, InAs和InGaAs中空穴引发的冲击电离和分裂带","authors":"N. Sano, M. Fischetti, S. Laux","doi":"10.1109/IWCE.1998.742746","DOIUrl":null,"url":null,"abstract":"The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs\",\"authors\":\"N. Sano, M. Fischetti, S. Laux\",\"doi\":\"10.1109/IWCE.1998.742746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.
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