{"title":"低温蓝宝石谐振器中机械应力引起的频率漂移","authors":"S. Chang, A. Mann","doi":"10.1109/FREQ.2001.956368","DOIUrl":null,"url":null,"abstract":"By comparing the drift rate between two nominally identical resonators, each with a choice of two closely spaced modes having a different electromagnetic configuration (E mode and H mode), it was found that variation of mechanical stress in the sapphire element induced by its mounting structure was the origin of the frequency drift of UWA 6 K sapphire oscillator reported previously. Discussions on the previously proposed mechanisms accounting for the oscillator residual frequency drift and measurement results on the relative frequency drift rate between a pair of resonators with different mechanical mounting structures are presented.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"18 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Mechanical stress caused frequency drift in cryogenic sapphire resonators\",\"authors\":\"S. Chang, A. Mann\",\"doi\":\"10.1109/FREQ.2001.956368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By comparing the drift rate between two nominally identical resonators, each with a choice of two closely spaced modes having a different electromagnetic configuration (E mode and H mode), it was found that variation of mechanical stress in the sapphire element induced by its mounting structure was the origin of the frequency drift of UWA 6 K sapphire oscillator reported previously. Discussions on the previously proposed mechanisms accounting for the oscillator residual frequency drift and measurement results on the relative frequency drift rate between a pair of resonators with different mechanical mounting structures are presented.\",\"PeriodicalId\":369101,\"journal\":{\"name\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"volume\":\"18 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2001.956368\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2001.956368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mechanical stress caused frequency drift in cryogenic sapphire resonators
By comparing the drift rate between two nominally identical resonators, each with a choice of two closely spaced modes having a different electromagnetic configuration (E mode and H mode), it was found that variation of mechanical stress in the sapphire element induced by its mounting structure was the origin of the frequency drift of UWA 6 K sapphire oscillator reported previously. Discussions on the previously proposed mechanisms accounting for the oscillator residual frequency drift and measurement results on the relative frequency drift rate between a pair of resonators with different mechanical mounting structures are presented.
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