亚毫米波下使用实压敏二极管的三倍频器的理论效率

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1131972

K. Benson, M. Frerking

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引用次数: 10

摘要

对工作在压敏电阻模式下的实际砷化镓肖特基二极管，计算了300 ~ 900 GHz三倍频器的理论效率。最大效率约为7%，仅略低于理想压敏电阻的效率。使用Siegel和Kerr的大信号分析计算机程序确定了最佳偏置条件和嵌入网络阻抗的准则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical Efficiency for Triplers Using Real Varister Diodes at Submillimeter Wavelengths

The theoretical efficiency for frequency triplers from 300 to 900 GHz has been calculated for real GaAs Schottky diodes operating in the varister mode. The maximum efficiency is determined to be about 7%, only slightly smaller than that for ideal varisters. Guidelines for optimum bias conditions and embedding network impedances have been determined using the large signal analysis computer program of Siegel and Kerr.

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1985 IEEE MTT-S International Microwave Symposium Digest

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