355nm Nd:YAG激光束缺陷激活和库仑爆炸形成纳米柱

Yujie Han, Y. Furukawa
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引用次数: 0

摘要

研究了紫外波长范围内纳秒级激光脉冲与半导体碳化硅的相互作用。在低能量影响下,利用355nm紫外激光辐照,通过缺陷活化和库仑爆炸在SiC表面形成了一排高度取向的纳米颗粒。在高能量影响下,会发生表面改性和烧蚀。
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Nanopillar Formation via Defect Activation and Coulomb Explosion Initiated by a 355 nm Nd:YAG Laser Beam
The interaction of nanosecond laser pulses in the ultraviolet wavelength range with the semiconductor SiC was investigated. Under low energy fluence, an array of highly orientated nanoparticles on the surface of SiC was formed via defect activation and coulomb explosion using 355 nm UV laser irradiation. Under high energy fluence, surface modification and ablation could occur.
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