低功耗摆幅恢复电路降低了sram的阈值电压,提高了读写性能

Vinod Kumar, Ram Murti Rawat
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摘要

本文讨论了一种适用于VLSI的快速、低功耗的摆幅恢复逆变器(SRI)电路技术。在该技术中,高速低功耗sram电路性能通过使用SRI来执行阈值电压降低和锁存器类型的摆幅恢复电路来驱动双节点电压来实现。使用Cadence Virtuoso原理图工具设计了一个基于sri的SRAM电路,采用130纳米技术,用于非常高速,低功耗的VLSI应用。本文主要由以下几个部分组成:一、导论。相关工作四、结果与讨论。五、结论。
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Low Power Swing Restoration Circuit Reduce Threshold Voltages of SRAMs Improve Read and Write Operations
In this paper Swing restoring inverter (SRI), a fast speed and low power circuit technology for VLSI applications that is discussed. In this technology, high speed low power SRAMs circuit performance is achieved by using an SRI to execute threshold voltage reductions and a swing restoring circuit of the latch kind to drive dual node voltages. Cadence Virtuoso schematics tool was used to design an SRI-based SRAM circuit with 130 nm technology for very high speed, low-power VLSI applications. This Paper is organized as follows: - I. Introduction II. Related work III. The proposed work IV. Results and discussion and V. Conclusion.
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