扫描电容显微镜制备先进节点FinFET器件掺杂谱的新方法综述

EDFA Technical Articles Pub Date : 2022-05-01 DOI:10.31399/asm.edfa.2022-2.p018

N. Adhikari, P. Kaszuba, Gaitan Mathieu, D. Dahanayaka

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引用次数: 0

摘要

样品制备是FinFET器件掺杂谱分析的关键步骤，特别是针对单个鳍片时。本文介绍了一种基于低能量、浅角离子铣削的样品制备技术，并展示了它如何最大限度地减少表面非晶化和改善扫描电容显微镜(SCM)信号，代表局部活性掺杂浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Strategic Review of Novel Sample Preparation Method for Dopant Profiling of Advanced Node FinFET Devices with Scanning Capacitance Microscopy

Sample preparation is a critical step for dopant profiling of FinFET devices, especially when targeting individual fins. This article describes a sample-preparation technique based on low-energy, shallow-angle ion milling and shows how it minimizes surface amorphization and improves scanning capacitance microscopy (SCM) signals representative of local active dopant concentration.

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EDFA Technical Articles

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