M. Ariga, Y. Sekido, A. Sakai, T. Baba, A. Matsutani, F. Koyama, K. Iga
{"title":"电感耦合等离子体刻蚀制备半导体/空气DBR低阈值GaInAsP激光器","authors":"M. Ariga, Y. Sekido, A. Sakai, T. Baba, A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/CLEOPR.1999.814783","DOIUrl":null,"url":null,"abstract":"We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.","PeriodicalId":408728,"journal":{"name":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","volume":"152 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching\",\"authors\":\"M. Ariga, Y. Sekido, A. Sakai, T. Baba, A. Matsutani, F. Koyama, K. Iga\",\"doi\":\"10.1109/CLEOPR.1999.814783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.\",\"PeriodicalId\":408728,\"journal\":{\"name\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"volume\":\"152 7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.1999.814783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.1999.814783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching
We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.
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