超高总电离剂量辐照下28nm大块mosfet的迁移率退化

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8705713

Chun Zhang, F. Jazaeri, G. Borghello, S. Mattiazzo, Andrea Baschirotto, Christian Enz

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引用次数: 1

摘要

利用y函数方法，实验研究了总电离剂量高达1 Grad对28纳米CMOS工艺通道迁移率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

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2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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