等离子体激活键合制备具有AlInAs-oxide约束结构的GaInAsP/SOI混合激光器

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-08-04 DOI:10.1109/ICIPRM.2016.7528752

Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai

{"title":"等离子体激活键合制备具有AlInAs-oxide约束结构的GaInAsP/SOI混合激光器","authors":"Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2016.7528752","DOIUrl":null,"url":null,"abstract":"We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInAsP/SOI hybrid laser with AlInAs-oxide confinement structure fabricated by plasma activated bonding\",\"authors\":\"Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai\",\"doi\":\"10.1109/ICIPRM.2016.7528752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们在硅平台上实现了具有AlInAs-oxide电流约束结构的GaInAsP/SOI混合fabry - p (FP)激光器。采用等离子体激活键合技术，采用湿氧化法氧化GaInAsP量子阱上方的AlInAs层。在未氧化条纹宽度为4.5 μm，腔长为500 μm的条件下，获得了阈值电流为50 mA，外差分量子效率为11%/facet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

GaInAsP/SOI hybrid laser with AlInAs-oxide confinement structure fabricated by plasma activated bonding

We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

自引率

0.00%

发文量