{"title":"射频磁控溅射铁电(Na,K)NbO/ sub3 /薄膜","authors":"M. Blomqvist, J. Koh, S. Khartsev, A. Grishin","doi":"10.1109/ISAF.2002.1195903","DOIUrl":null,"url":null,"abstract":"Sodium potassium niobate (Na,K)NbO/sub 3/ (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ target on LaAlO/sub 3/ (LAO) single crystals and polycrystalline Pt/sub 80/Ir/sub 20/ (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (00l) oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO/sub 3/ film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 /spl mu/C/cm/sup 2/ at 700 kV/cm remnant polarization of 9.9 /spl mu/C/cm/sup 2/, and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm/sup 2/ at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Rf-magnetron sputtered ferroelectric (Na,K)NbO/sub 3/ films\",\"authors\":\"M. Blomqvist, J. Koh, S. Khartsev, A. Grishin\",\"doi\":\"10.1109/ISAF.2002.1195903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sodium potassium niobate (Na,K)NbO/sub 3/ (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ target on LaAlO/sub 3/ (LAO) single crystals and polycrystalline Pt/sub 80/Ir/sub 20/ (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (00l) oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO/sub 3/ film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 /spl mu/C/cm/sup 2/ at 700 kV/cm remnant polarization of 9.9 /spl mu/C/cm/sup 2/, and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm/sup 2/ at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Rf-magnetron sputtered ferroelectric (Na,K)NbO/sub 3/ films
Sodium potassium niobate (Na,K)NbO/sub 3/ (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ target on LaAlO/sub 3/ (LAO) single crystals and polycrystalline Pt/sub 80/Ir/sub 20/ (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (00l) oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO/sub 3/ film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 /spl mu/C/cm/sup 2/ at 700 kV/cm remnant polarization of 9.9 /spl mu/C/cm/sup 2/, and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm/sup 2/ at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.
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