{"title":"采用自对准双极结构的4 ghz 12 w晶体管放大器","authors":"N. Tsuzuki, Y. Saito, T. Sakai","doi":"10.1109/ISSCC.1977.1155715","DOIUrl":null,"url":null,"abstract":"A HIGH-POWER three-stage transistor amplifier utilizing a bipolar transistor, which can deliver 12W output power at 4 GHz, will be described. The amplifier, exhibiting power gain of l l l3dB, power added efficiency of 17%, and can operate with a 20-V dc power supply, contains seven units of a 3-W bipolar transistor, fabricated with self-aligned electrode formation technology’. Figure 1 shows the block diagram of the amplifier circuit. Each transistor amplifier segment contains input and output matching networks of the microstripline type, and is connected to the power combiner/divider of a double section 3dB quarter wavelength hybrid. Teflon glass-fiber substrates have been used for the matching networks and for the hybrid couplers. In Figures 2 (a) and (b) RF performance characteristics i.e., output power, efficiency and AM-PM conversion coefficient versus input power, and output power versus frequency characteristics at different ambient temperatures are shown. The noise loading characteristics are also satisfactory.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 4-GHz 12-W transistor amplifier utilizing a self-aligned bipolar structure\",\"authors\":\"N. Tsuzuki, Y. Saito, T. Sakai\",\"doi\":\"10.1109/ISSCC.1977.1155715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A HIGH-POWER three-stage transistor amplifier utilizing a bipolar transistor, which can deliver 12W output power at 4 GHz, will be described. The amplifier, exhibiting power gain of l l l3dB, power added efficiency of 17%, and can operate with a 20-V dc power supply, contains seven units of a 3-W bipolar transistor, fabricated with self-aligned electrode formation technology’. Figure 1 shows the block diagram of the amplifier circuit. Each transistor amplifier segment contains input and output matching networks of the microstripline type, and is connected to the power combiner/divider of a double section 3dB quarter wavelength hybrid. Teflon glass-fiber substrates have been used for the matching networks and for the hybrid couplers. In Figures 2 (a) and (b) RF performance characteristics i.e., output power, efficiency and AM-PM conversion coefficient versus input power, and output power versus frequency characteristics at different ambient temperatures are shown. The noise loading characteristics are also satisfactory.\",\"PeriodicalId\":416313,\"journal\":{\"name\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1977.1155715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1977.1155715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4-GHz 12-W transistor amplifier utilizing a self-aligned bipolar structure
A HIGH-POWER three-stage transistor amplifier utilizing a bipolar transistor, which can deliver 12W output power at 4 GHz, will be described. The amplifier, exhibiting power gain of l l l3dB, power added efficiency of 17%, and can operate with a 20-V dc power supply, contains seven units of a 3-W bipolar transistor, fabricated with self-aligned electrode formation technology’. Figure 1 shows the block diagram of the amplifier circuit. Each transistor amplifier segment contains input and output matching networks of the microstripline type, and is connected to the power combiner/divider of a double section 3dB quarter wavelength hybrid. Teflon glass-fiber substrates have been used for the matching networks and for the hybrid couplers. In Figures 2 (a) and (b) RF performance characteristics i.e., output power, efficiency and AM-PM conversion coefficient versus input power, and output power versus frequency characteristics at different ambient temperatures are shown. The noise loading characteristics are also satisfactory.
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