D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna
{"title":"溶剂热生长碲化铋六方纳米片的热电性能","authors":"D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna","doi":"10.1109/NANO.2018.8626374","DOIUrl":null,"url":null,"abstract":"We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermoelectric Properties of Solvothermal Grown Bismuth Telluride Hexagonal Nanoplates\",\"authors\":\"D. S. Choi, P. Taylor, K. J. Perry, G. Mallick, S. Karna\",\"doi\":\"10.1109/NANO.2018.8626374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.\",\"PeriodicalId\":425521,\"journal\":{\"name\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2018.8626374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric Properties of Solvothermal Grown Bismuth Telluride Hexagonal Nanoplates
We have probed straightforwardly, thermoelectric (TE) properties of bismuth telluride (Bi2Te3) nanoplates grown via solvothermal method, without any modifications or optimization. The material was synthesized, its crystalline structure characterized, and prepared for TE measurements via sintering via Gleeble. Electron microscopy and diffraction data show highly crystalline hexagonal nanoplates with lateral growth direction. The thermoelectric properties of the sintered sample exhibit Seebeck coefficient of 21.118 uV/K which is in range of most optimized and engineered Bi2Te3 based TE devices. The results presented in this proceeding may prove invaluable in research and development of next-generation of low-dimension, low-costing thermoelectric devices and power generators.