K. Tahy, W. Hwang, J. Tedesco, R. Myers-Ward, P. Campbell, C. Eddy, D. Gaskill, H. Xing, A. Seabaugh, D. Jena
{"title":"亚10nm外延石墨烯纳米带场效应管","authors":"K. Tahy, W. Hwang, J. Tedesco, R. Myers-Ward, P. Campbell, C. Eddy, D. Gaskill, H. Xing, A. Seabaugh, D. Jena","doi":"10.1109/DRC.2011.5994411","DOIUrl":null,"url":null,"abstract":"Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graphene nanoribbons (GNRs); GNRs with width W nm have a bandgap Eg∼1.3/W eV [1]. This implies that sub-10 nm wide ribbons can enable room-temperature operation of GNRs as traditional semiconductors, but with ultimate vertical scaling, and still take advantage of high current drives. To date, GNRs have been fabricated from exfoliated graphene [2] and operated by back gates, or nanometer scale ribbons produced by ‘explosive’ methods [3] that are neither controlled nor reproducible. These methods are not suitable for large-area device fabrication. In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding ∼0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 – 800 cm2/Vs), high current modulation (10∶1 at 300 K), and high current carrying capacity (0.3 mA/µm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Sub-10 nm epitaxial graphene nanoribbon FETs\",\"authors\":\"K. Tahy, W. Hwang, J. Tedesco, R. Myers-Ward, P. Campbell, C. Eddy, D. Gaskill, H. Xing, A. Seabaugh, D. Jena\",\"doi\":\"10.1109/DRC.2011.5994411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graphene nanoribbons (GNRs); GNRs with width W nm have a bandgap Eg∼1.3/W eV [1]. This implies that sub-10 nm wide ribbons can enable room-temperature operation of GNRs as traditional semiconductors, but with ultimate vertical scaling, and still take advantage of high current drives. To date, GNRs have been fabricated from exfoliated graphene [2] and operated by back gates, or nanometer scale ribbons produced by ‘explosive’ methods [3] that are neither controlled nor reproducible. These methods are not suitable for large-area device fabrication. In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding ∼0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 – 800 cm2/Vs), high current modulation (10∶1 at 300 K), and high current carrying capacity (0.3 mA/µm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graphene nanoribbons (GNRs); GNRs with width W nm have a bandgap Eg∼1.3/W eV [1]. This implies that sub-10 nm wide ribbons can enable room-temperature operation of GNRs as traditional semiconductors, but with ultimate vertical scaling, and still take advantage of high current drives. To date, GNRs have been fabricated from exfoliated graphene [2] and operated by back gates, or nanometer scale ribbons produced by ‘explosive’ methods [3] that are neither controlled nor reproducible. These methods are not suitable for large-area device fabrication. In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding ∼0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 – 800 cm2/Vs), high current modulation (10∶1 at 300 K), and high current carrying capacity (0.3 mA/µm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.