Yuanlin Li, Reon Katsumura, Mika Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Yasuo Takahashi
{"title":"采用Ta2O5绝缘体和不同电极材料的ReRAM多层存储性能评价","authors":"Yuanlin Li, Reon Katsumura, Mika Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Yasuo Takahashi","doi":"10.23919/SNW.2017.8242309","DOIUrl":null,"url":null,"abstract":"ReRAM (Resistive Random Access Memory) has been drawing attention for its neural network applications with low-power and high-speed operation. The multilevel data storage capability is inherently needed to use the ReRAM as synaptic devices. In this study, two ReRAM devices with different electrode materials in which the operation mechanisms are thought to be different was fabricated and tested. It was clarified that the multilevel resistance characteristics were achieved in both devices.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of multilevel memory capability of ReRAM using Ta2O5 insulator and different electrode materials\",\"authors\":\"Yuanlin Li, Reon Katsumura, Mika Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Yasuo Takahashi\",\"doi\":\"10.23919/SNW.2017.8242309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ReRAM (Resistive Random Access Memory) has been drawing attention for its neural network applications with low-power and high-speed operation. The multilevel data storage capability is inherently needed to use the ReRAM as synaptic devices. In this study, two ReRAM devices with different electrode materials in which the operation mechanisms are thought to be different was fabricated and tested. It was clarified that the multilevel resistance characteristics were achieved in both devices.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242309\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of multilevel memory capability of ReRAM using Ta2O5 insulator and different electrode materials
ReRAM (Resistive Random Access Memory) has been drawing attention for its neural network applications with low-power and high-speed operation. The multilevel data storage capability is inherently needed to use the ReRAM as synaptic devices. In this study, two ReRAM devices with different electrode materials in which the operation mechanisms are thought to be different was fabricated and tested. It was clarified that the multilevel resistance characteristics were achieved in both devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
