技术参数对共栅LNAs性能的影响

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706638

T. Stucke, N. Christoffers, R. Kokozinski, S. Kolnsberg, B. Hosticka

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引用次数: 4

摘要

本文研究了短信道效应对共门LNAs (CG-LNAs)性能的影响。它基于对MOSFET在所有可能工作区域内的固有寄生和外在寄生行为的建模。定义了所用CMOS技术的特性性能，确定了与偏置相关的最小输入反射系数和噪声系数。进一步说明了在中逆温区偏置CG-LNA的优点

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Impact Of Technology Parameters On The Performance Of Common-gate LNAs

In this paper the impact of short channel effects on the performance of common-gate LNAs (CG-LNAs) is presented. It based on the modeling the MOSFET behavior including its intrinsic and extrinsic parasitics in all possible regions of operation. Characteristic performance figures of the used CMOS technology are defined and the bias dependent minimum input reflection coefficient and noise figure is determined. The paper shows furthermore the advantage of biasing the CG-LNA in the moderate inversion region

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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