Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin
{"title":"三维集成TSV/RDL的电测量与分析","authors":"Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin","doi":"10.1109/EPTC.2014.7028399","DOIUrl":null,"url":null,"abstract":"In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electrical measurement and analysis of TSV/RDL for 3D integration\",\"authors\":\"Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin\",\"doi\":\"10.1109/EPTC.2014.7028399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.\",\"PeriodicalId\":115713,\"journal\":{\"name\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2014.7028399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical measurement and analysis of TSV/RDL for 3D integration
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
