{"title":"热电子注入器用硅基隧道MIS结构的优化","authors":"I. Grekhov, A.F. Shulekin, M. Vexler","doi":"10.1109/SMICND.1996.557391","DOIUrl":null,"url":null,"abstract":"Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"41 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of the silicon-based tunnel MIS structures as hot electron injectors\",\"authors\":\"I. Grekhov, A.F. Shulekin, M. Vexler\",\"doi\":\"10.1109/SMICND.1996.557391\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"41 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557391\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of the silicon-based tunnel MIS structures as hot electron injectors
Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.
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