异质结构设计对AlGaN/GaN hemt噪声系数的影响

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367775

C. Sanabria, Hongtao Xu, Tomas Palacios, P. Chakraborty, S. Heikman, Umesh K. Mishra, R. A. York

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引用次数: 2

摘要

在这项工作中，我们涵盖了四个主题。在4-12 GHz频率范围内，研究了不同涂层结构对AlGaN/GaN hemt噪声系数的影响。材料研究包括阻挡层中不同的铝成分，蓝宝石与SiC衬底，以及首次研究薄AlN层对噪声参数的影响;这三个都是针对频率和漏极电流的。此外，还比较了两种5ghz的等效电路模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs

In this work, we cover four topics. Three studies are presented on the effect of different epilayer structures on the noise figure of AlGaN/GaN HEMTs in the 4-12 GHz frequency range. The material studies include varying aluminum composition in the barrier, sapphire vs. SiC substrates, and, for the first time, the influence of a thin AlN layer on the noise parameters; all three against frequency and drain current. In addition is a comparison of two equivalent circuit models at 5 GHz.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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