使用二维电子气体场效应管的低噪声放大器

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1132034

T. Mochizuki, K. Honma, K. Handa, W. Akinaga, K. Ohata

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引用次数: 4

摘要

公开了最近开发的用于卫星通信地面站的含二维电子气场效应管的lna，该lna具有划时代的低噪声。在2、4、12和20 GHz频段，在室温下，特别是在冷却状态下。通常进一步详细介绍新开发的最大55k的4ghz频段LNA。在室温下的噪声温度，在热电(TE-)冷却状态(约45℃)下，800 MHz带宽(3.4 ~ 4.2 GHz)上的噪声温度为30 K数量级，KDD进行的新地面站采用了该噪声温度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low Noise Amplifiers Using Two Dimensional Electron Gas FETs

Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.

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1985 IEEE MTT-S International Microwave Symposium Digest

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