{"title":"高性能w波段伪晶InAlAs/InGaAs/InP功率hemt","authors":"S.C. Wang, M. Kao, S. Liu, P. Ho, K. Duh","doi":"10.1109/DRC.1994.1009455","DOIUrl":null,"url":null,"abstract":"A double heterojunction pseudomorphic structure was grown by MBE on Fe-doped semiinsulating InP substrate. The layers consisted of a thin InAlAs buffer, a pseudomorphic IQ 67G% 33As channel with InAlAs spacer and Si planar doping on both sides of the channel. On topof the'channel is the undoped InAlAs gate layer and the n+ InGaAs cap layer. The 77K sheet charge density and mobility were determined by Hall measurement to be 2.9~1012 cm-2 and 29,000 cmZNs, respectively.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High performance w-band pseudomorphic InAlAs/InGaAs/InP power HEMTs\",\"authors\":\"S.C. Wang, M. Kao, S. Liu, P. Ho, K. Duh\",\"doi\":\"10.1109/DRC.1994.1009455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A double heterojunction pseudomorphic structure was grown by MBE on Fe-doped semiinsulating InP substrate. The layers consisted of a thin InAlAs buffer, a pseudomorphic IQ 67G% 33As channel with InAlAs spacer and Si planar doping on both sides of the channel. On topof the'channel is the undoped InAlAs gate layer and the n+ InGaAs cap layer. The 77K sheet charge density and mobility were determined by Hall measurement to be 2.9~1012 cm-2 and 29,000 cmZNs, respectively.\",\"PeriodicalId\":244069,\"journal\":{\"name\":\"52nd Annual Device Research Conference\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"52nd Annual Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1994.1009455\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance w-band pseudomorphic InAlAs/InGaAs/InP power HEMTs
A double heterojunction pseudomorphic structure was grown by MBE on Fe-doped semiinsulating InP substrate. The layers consisted of a thin InAlAs buffer, a pseudomorphic IQ 67G% 33As channel with InAlAs spacer and Si planar doping on both sides of the channel. On topof the'channel is the undoped InAlAs gate layer and the n+ InGaAs cap layer. The 77K sheet charge density and mobility were determined by Hall measurement to be 2.9~1012 cm-2 and 29,000 cmZNs, respectively.
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