Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli
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GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.
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