Hysteresis in a field-effect device based on an exfoliated thin film of few-layer graphene

Graphene has excellent properties that are useful in many electronic device applications. In this report, a mechanical exfoliation method has been used to fabricate a field-effect device based on a thin film of few-layer graphene (FLG). The occurrence of p-doping and hysteresis in the current-voltage behavior was observed and characterized. The possible reasons for this observation were explained and discussed in terms of the sensitivity of graphene to the atmosphere and its surrounding conditions which can cause some effects on the charged carriers in the device.