A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, H. Moyer, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, D. Chow
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W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology
We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter
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