{"title":"嵌入式非易失性存储器在智能社会中的应用前景","authors":"T. Yamauchi","doi":"10.1109/VLSI-TSA.2015.7117541","DOIUrl":null,"url":null,"abstract":"Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Prospect of embedded non-volatile memory in the smart society\",\"authors\":\"T. Yamauchi\",\"doi\":\"10.1109/VLSI-TSA.2015.7117541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.\",\"PeriodicalId\":369130,\"journal\":{\"name\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2015.7117541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI Design, Automation and Test(VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2015.7117541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Prospect of embedded non-volatile memory in the smart society
Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.