在二氧化钒中使用电荷注入诱导绝缘体-金属跃迁的太赫兹法布里-帕姆罗调制器

2016 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2016-03-14 DOI:10.1109/IEEE-IWS.2016.7585435

O. Fawole, M. Tabib-Azar

{"title":"在二氧化钒中使用电荷注入诱导绝缘体-金属跃迁的太赫兹法布里-帕姆罗调制器","authors":"O. Fawole, M. Tabib-Azar","doi":"10.1109/IEEE-IWS.2016.7585435","DOIUrl":null,"url":null,"abstract":"We report the use of Insulator-Metal Transition (IMT) of vanadium dioxide (VO2) to modulate Fabry-Pérot resonances in a terahertz Fabry-Pérot resonator. Our two-plate Fabry-Pérot modulator consists of one partially reflecting plate of monolayer graphene on a polymer substrate, and another plate of VO2-integrated copper electrodes. VO2, a strongly correlated electron system, undergoes IMT upon application of external stimuli. In our Fabry-Pérot modulator device, we stimulated VO2 IMT by injecting charges into the VO2 via copper electrodes to realize a terahertz modulator. With 500mA DC at 12 V, we obtained 50% amplitude modulation depth at 0.884 THz.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A terahertz Fabry-Pérot modulator using charge injection-induced insulator-metal transition in vanadium dioxide\",\"authors\":\"O. Fawole, M. Tabib-Azar\",\"doi\":\"10.1109/IEEE-IWS.2016.7585435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the use of Insulator-Metal Transition (IMT) of vanadium dioxide (VO2) to modulate Fabry-Pérot resonances in a terahertz Fabry-Pérot resonator. Our two-plate Fabry-Pérot modulator consists of one partially reflecting plate of monolayer graphene on a polymer substrate, and another plate of VO2-integrated copper electrodes. VO2, a strongly correlated electron system, undergoes IMT upon application of external stimuli. In our Fabry-Pérot modulator device, we stimulated VO2 IMT by injecting charges into the VO2 via copper electrodes to realize a terahertz modulator. With 500mA DC at 12 V, we obtained 50% amplitude modulation depth at 0.884 THz.\",\"PeriodicalId\":185971,\"journal\":{\"name\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2016.7585435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了使用二氧化钒(VO2)的绝缘体-金属跃迁(IMT)来调制太赫兹法布里-普萨梅特谐振器中的法布里-普萨梅特谐振。我们的双极板fabry - p调制器由一个在聚合物衬底上的单层石墨烯部分反射板和另一个vo2集成铜电极板组成。VO2是一种强相关电子系统，在外界刺激下发生IMT。在我们的fabry - p调制器装置中，我们通过铜电极向VO2注入电荷来刺激VO2的IMT，从而实现了太赫兹调制器。在12v 500mA DC下，我们在0.884 THz下获得50%的调幅深度。

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A terahertz Fabry-Pérot modulator using charge injection-induced insulator-metal transition in vanadium dioxide

We report the use of Insulator-Metal Transition (IMT) of vanadium dioxide (VO₂) to modulate Fabry-Pérot resonances in a terahertz Fabry-Pérot resonator. Our two-plate Fabry-Pérot modulator consists of one partially reflecting plate of monolayer graphene on a polymer substrate, and another plate of VO₂-integrated copper electrodes. VO₂, a strongly correlated electron system, undergoes IMT upon application of external stimuli. In our Fabry-Pérot modulator device, we stimulated VO₂ IMT by injecting charges into the VO₂ via copper electrodes to realize a terahertz modulator. With 500mA DC at 12 V, we obtained 50% amplitude modulation depth at 0.884 THz.

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2016 IEEE MTT-S International Wireless Symposium (IWS)

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