{"title":"轻、重载流子引起硅p-n结击穿","authors":"T. Purītis","doi":"10.1109/SMICND.1996.557394","DOIUrl":null,"url":null,"abstract":"The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Light and heavy charge carrier caused breakdown of silicon p-n junction\",\"authors\":\"T. Purītis\",\"doi\":\"10.1109/SMICND.1996.557394\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557394\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Light and heavy charge carrier caused breakdown of silicon p-n junction
The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.
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